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A new reactor concept for epitaxial growth of SiC
1996 (English)In: SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 81-84 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
1996. 81-84 p.
Series
INSTITUTE OF PHYSICS CONFERENCE SERIES, ISSN 0951-3248 ; 142
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-161323ISI: A1996BF72L00019ISBN: 0-7503-0335-2 (print)OAI: oai:DiVA.org:kth-161323DiVA: diva2:794694
Conference
International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), SEP 18-21, 1995, KYOTO, JAPAN
Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-03-30Bibliographically approved

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Nordell, N

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CiteExportLink to record
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  • apa
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  • ieee
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More styles
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