Change search
ReferencesLink to record
Permanent link

Direct link
Epitaxial overgrowth method for III-V cpd. semiconductor on substrate step|comprises use of combination of implantation and re-growth to allow formation of buried structures in silicon carbide whilst obtaining high-quality layers
1996 (English)Patent (Other (popular science, discussion, etc.))
Place, publisher, year, edition, pages
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-161320ISI: 1997489903OAI: diva2:794696

QS 201504

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-09Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Nordell, Nils
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 24 hits
ReferencesLink to record
Permanent link

Direct link