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Deep level defects in electron-irradiated 4H SiC epitaxial layers
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1997 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 81, no 9, 6155-6159 p.Article in journal (Refereed) Published
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1997. Vol. 81, no 9, 6155-6159 p.
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Engineering and Technology
URN: urn:nbn:se:kth:diva-161317DOI: 10.1063/1.364397ISI: A1997WW72900038OAI: diva2:794702

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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Hemmingsson, CNordell, N
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