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Deep defect centers in silicon carbide monitored with deep level transient spectroscopy
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1997 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 162, no 1, 199-225 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 162, no 1, 199-225 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161313DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0ISI: A1997XQ45700009OAI: oai:DiVA.org:kth-161313DiVA: diva2:794703
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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