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Ionization rates and critical fields in 4H silicon carbide
1997 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 71, no 1, 90-92 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 71, no 1, 90-92 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161314DOI: 10.1063/1.119478ISI: A1997XJ13900031OAI: oai:DiVA.org:kth-161314DiVA: diva2:794704
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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