Influence of growth conditions on electrical characteristics of AlN on SiC
1997 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 70, no 26, 3549-3551 p.Article in journal (Refereed) Published
Undoped aluminum nitride films were grown on 4H or 6H silicon carbide substrates, using metalorganic chemical-vapor deposition at 1150°C. Different growth conditions were used, and two different V/III ratios were tested. Metal-insulator-semiconductor capacitors were made for high-frequency capacitance-voltage measurements at room temperature, from which the film thickness was determined. Accumulation, depletion, deep depletion, and inversion were seen for the best films, which also displayed peaks in x-ray diffraction rocking curves. Although large flatband voltage shifts occurred, indicating a fixed charge and interface trap problem, low conductance was observed. A flow of ammonia during ramp-up was found to improve the AlN films.
Place, publisher, year, edition, pages
1997. Vol. 70, no 26, 3549-3551 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-161315DOI: 10.1063/1.119229ISI: A1997XG49900021ScopusID: 2-s2.0-0012227751OAI: oai:DiVA.org:kth-161315DiVA: diva2:794705
QC 201503242015-03-122015-03-112015-03-24Bibliographically approved