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Influence of growth conditions on electrical characteristics of AlN on SiC
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-5845-3032
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1997 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 70, no 26, 3549-3551 p.Article in journal (Refereed) Published
Abstract [en]

Undoped aluminum nitride films were grown on 4H or 6H silicon carbide substrates, using metalorganic chemical-vapor deposition at 1150°C. Different growth conditions were used, and two different V/III ratios were tested. Metal-insulator-semiconductor capacitors were made for high-frequency capacitance-voltage measurements at room temperature, from which the film thickness was determined. Accumulation, depletion, deep depletion, and inversion were seen for the best films, which also displayed peaks in x-ray diffraction rocking curves. Although large flatband voltage shifts occurred, indicating a fixed charge and interface trap problem, low conductance was observed. A flow of ammonia during ramp-up was found to improve the AlN films.

Place, publisher, year, edition, pages
1997. Vol. 70, no 26, 3549-3551 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161315DOI: 10.1063/1.119229ISI: A1997XG49900021Scopus ID: 2-s2.0-0012227751OAI: oai:DiVA.org:kth-161315DiVA: diva2:794705
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QC 20150324

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Zetterling, Carl-MikaelNordell, Nils

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