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Characterization of electrically active deep level defects in 4H and 6H SiC
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1997 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 6, no 10, 1388-1391 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 6, no 10, 1388-1391 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161312DOI: 10.1016/S0925-9635(97)00102-7ISI: A1997XW16700034OAI: oai:DiVA.org:kth-161312DiVA: diva2:794707
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1st European Conference on Silicon Carbide and Related Materials (ECSCRM 96), OCT 06-09, 1996, IRAKLION, GREECE
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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