Change search
ReferencesLink to record
Permanent link

Direct link
Characterization of electrically active deep level defects in 4H and 6H SiC
Show others and affiliations
1997 (English)In: Diamond and related materials, ISSN 0925-9635, Vol. 6, no 10, 1388-1391 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 6, no 10, 1388-1391 p.
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-161312DOI: 10.1016/S0925-9635(97)00102-7ISI: A1997XW16700034OAI: diva2:794707
1st European Conference on Silicon Carbide and Related Materials (ECSCRM 96), OCT 06-09, 1996, IRAKLION, GREECE

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Nordell, N
In the same journal
Diamond and related materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 15 hits
ReferencesLink to record
Permanent link

Direct link