Device and a method for epitaxially growing objects by cvd
1996 (English)Patent (Other (popular science, discussion, etc.))
A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part.
Place, publisher, year, edition, pages
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-161308ISI: 1998331967OAI: oai:DiVA.org:kth-161308DiVA: diva2:794710
US 5759263A (1998-06-02)
QC 201504092015-03-122015-03-112015-04-09Bibliographically approved