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Device and a method for epitaxially growing objects by cvd
1996 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part.

Place, publisher, year, edition, pages
1996.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-161308ISI: 1998331967OAI: oai:DiVA.org:kth-161308DiVA: diva2:794710
Patent
US 5759263A (1998-06-02)
Note

QC 20150409

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-09Bibliographically approved

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Nordell, Nils

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