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High-voltage operation of field-effect transistors in silicon carbide
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1997 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 18, no 11, 521-522 p.Article in journal (Refereed) Published
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1997. Vol. 18, no 11, 521-522 p.
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Engineering and Technology
URN: urn:nbn:se:kth:diva-161309DOI: 10.1109/55.641432ISI: A1997YD00300005OAI: diva2:794711

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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Nordell, N
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