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6H-SiC crystallinity behaviour upon B implantation studied by Raman scattering
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1998 (English)In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97 :: Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997, Trans Tech Publications Inc., 1998, Vol. Issue Part 2, 741-744 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this study, B ion implantation was performed in n-type 6H-SiC single crystals at 500 degrees C. The implanted specimens were annealed at 1700 degrees C in SiH4 atmosphere. Lattice damage induced by implantation and its recovery was characterised by Raman scattering. Reduced damage compared with other ions implantation was observed. Recrystallization of the implanted material and absence of amorphous phases was detected after high temperature annealing.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. Issue Part 2, 741-744 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 264-268
Keyword [en]
boron, ion implantation, lattice damage, recovery, Raman scattering, TRIM simulation
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-161303ISI: 000072751000176Scopus ID: 2-s2.0-11644259231ISBN: 0-87849-790-0 (print)OAI: oai:DiVA.org:kth-161303DiVA: diva2:794717
Conference
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), AUG 31-SEP 05, 1997, Stockholm, Sweden
Note

QC 20150313

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-03-13Bibliographically approved

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Nordell, Nils

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