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AFM study of in situ etching of 4H and 6H SiC substrates
1998 (English)In: SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 363-366 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
1998. 363-366 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 264-2
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-161297ISI: 000072751000086ISBN: 0-87849-790-0 (print)OAI: oai:DiVA.org:kth-161297DiVA: diva2:794722
Conference
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), AUG 31-SEP 05, 1997, STOCKHOLM, SWEDEN
Note

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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Nordell, N

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