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Study of avalanche breakdown and impact ionization in 4H silicon carbide
1998 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 27, no 4, 335-341 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1998. Vol. 27, no 4, 335-341 p.
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Engineering and Technology
URN: urn:nbn:se:kth:diva-161294DOI: 10.1007/s11664-998-0411-xISI: 000073248600034OAI: diva2:794725
39th Electronic Materials Conference (EMC), 1997, COLORADA STATE UNIV, FT COLLINS, COLORADO

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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