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Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide
1998 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 73, no 13, 1850-1852 p.Article in journal (Refereed) Published
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1998. Vol. 73, no 13, 1850-1852 p.
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Engineering and Technology
URN: urn:nbn:se:kth:diva-161290DOI: 10.1063/1.122303ISI: 000076180300032OAI: diva2:794727

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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Nordell, N
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