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Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures
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1999 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 46, no 3, 605-611 p.Article in journal (Refereed) Published
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1999. Vol. 46, no 3, 605-611 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161288DOI: 10.1109/16.748885ISI: 000086784900028OAI: oai:DiVA.org:kth-161288DiVA: diva2:794730
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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