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B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing
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1999 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 17, no 3, 1040-1044 p.Article in journal (Refereed) Published
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1999. Vol. 17, no 3, 1040-1044 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161287DOI: 10.1116/1.590690ISI: 000080853100024OAI: oai:DiVA.org:kth-161287DiVA: diva2:794731
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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