Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Show others and affiliations
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-2, 239-243 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 61-2, 239-243 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-161283DOI: 10.1016/S0921-5107(98)00510-8ISI: 000082234800050OAI: oai:DiVA.org:kth-161283DiVA: diva2:794736
Conference
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), SEP 02-04, 1998, MONTPELLIER, FRANCE
Note

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Nordell, N

Search in DiVA

By author/editor
Nordell, N
In the same journal
Materials Science & Engineering: B. Solid-state Materials for Advanced Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 33 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf