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Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-2, 130-134 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 61-2, 130-134 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-161281DOI: 10.1016/S0921-5107(98)00485-1ISI: 000082234800025OAI: oai:DiVA.org:kth-161281DiVA: diva2:794738
Conference
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), SEP 02-04, 1998, MONTPELLIER, FRANCE
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NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2017-12-04Bibliographically approved

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Nordell, N

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