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Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC: Structural characterization
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2000 (English)In: Silicon Carbide and Related Materials - 1999 Pts, 1 & 2, Trans Tech Publications Inc., 2000, 309-312 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. 309-312 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 338
Keyword [en]
CVD growth, FTIR, ion beam synthesis, TEM, XRD
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-161279ISI: 000165996700075Scopus ID: 2-s2.0-3142712525OAI: oai:DiVA.org:kth-161279DiVA: diva2:794739
Conference
ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, , 10 October 1999 through 15 October 1999
Note

QC 20150313

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-03-13Bibliographically approved

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Nordell, Nils

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