Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC: Structural characterization
2000 (English)In: Silicon Carbide and Related Materials - 1999 Pts, 1 & 2, Trans Tech Publications Inc., 2000, 309-312 p.Conference paper (Refereed)
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. 309-312 p.
, Materials Science Forum, ISSN 0255-5476 ; 338
CVD growth, FTIR, ion beam synthesis, TEM, XRD
IdentifiersURN: urn:nbn:se:kth:diva-161279ISI: 000165996700075ScopusID: 2-s2.0-3142712525OAI: oai:DiVA.org:kth-161279DiVA: diva2:794739
ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, , 10 October 1999 through 15 October 1999
QC 201503132015-03-122015-03-112015-03-13Bibliographically approved