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Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 80, no 10, 1755-1757 p.Article in journal (Refereed) Published
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2002. Vol. 80, no 10, 1755-1757 p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-161274DOI: 10.1063/1.1458048ISI: 000174181800025OAI: diva2:794742

NR 20150402

Available from: 2015-03-12 Created: 2015-03-11 Last updated: 2015-04-02Bibliographically approved

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Nordell, NKakanakova-Georgieva, A
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