Elimination of multimode effects in a silicon-on-insulator etched diffraction grating demultiplexer with bi-level taper structure
2005 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 11, no 2, 439-443 p.Article in journal (Refereed) Published
Multimode effects in the free propagation region (FPR) of an etched diffraction grating (EDG) demultiplexer based on silicon-on-insulator are analyzed. The insertion loss and the crosstalk increase due to these undesired multimode effects. A bi-level taper structure between the FPR and the input/output waveguides is proposed. It is shown that such a taper structure can reduce the multimode effects to an almost negligible level. At the same time, the 3-dB passband width is enlarged by increasing the rib width. No additional fabrication process is needed for an EDG with such a design.
Place, publisher, year, edition, pages
2005. Vol. 11, no 2, 439-443 p.
air slot, crosstalk, etched diffraction grating (EDG), insertion loss, multimode effect, silicon-on-insulator (SOI), taper
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5160DOI: 10.1109/JSTQE.2005.846543ISI: 000228938900019ScopusID: 2-s2.0-18844371558OAI: oai:DiVA.org:kth-5160DiVA: diva2:7962
QC 201009132005-05-272005-05-272013-11-19Bibliographically approved