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Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films
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2015 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 133, 6-10 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the effects of carbon pre-germanidation implant into Ge on the properties of NiGe films were systematically investigated. NiGe films with carbon pre-germanidation implant to doses varying from 0 to 6 x 10(15) cm(-2) were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of C atoms is proved to significantly enhance the thermal stability of NiGe by about 100 degrees C as well as to change the preferred orientations of polycrystalline NiGe. The homogenous redistribution of C atoms within NiGe films and the segregation of C atoms at the NiGe/Ge interface is responsible for the improved thermal stability of NiGe films.

Place, publisher, year, edition, pages
2015. Vol. 133, 6-10 p.
Keyword [en]
Carbon implant, Thermal stability, NiGe
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-161106DOI: 10.1016/j.mee.2014.11.008ISI: 000348891500002Scopus ID: 2-s2.0-84918574844OAI: oai:DiVA.org:kth-161106DiVA: diva2:797576
Note

QC 20150324

Available from: 2015-03-24 Created: 2015-03-09 Last updated: 2017-12-04Bibliographically approved

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