Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films
2015 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 133, 6-10 p.Article in journal (Refereed) Published
In this work, the effects of carbon pre-germanidation implant into Ge on the properties of NiGe films were systematically investigated. NiGe films with carbon pre-germanidation implant to doses varying from 0 to 6 x 10(15) cm(-2) were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of C atoms is proved to significantly enhance the thermal stability of NiGe by about 100 degrees C as well as to change the preferred orientations of polycrystalline NiGe. The homogenous redistribution of C atoms within NiGe films and the segregation of C atoms at the NiGe/Ge interface is responsible for the improved thermal stability of NiGe films.
Place, publisher, year, edition, pages
2015. Vol. 133, 6-10 p.
Carbon implant, Thermal stability, NiGe
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-161106DOI: 10.1016/j.mee.2014.11.008ISI: 000348891500002ScopusID: 2-s2.0-84918574844OAI: oai:DiVA.org:kth-161106DiVA: diva2:797576
QC 201503242015-03-242015-03-092015-03-24Bibliographically approved