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Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
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2015 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 99, 53-56 p.Article in journal (Refereed) Published
Abstract [en]

We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960 degrees C, based on the Ti-SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers the possibility of direct synthesis of oxygen-barrier capping layers before exposure to air, potentially improving contact stability in high-temperature and high-power devices.

Place, publisher, year, edition, pages
2015. Vol. 99, 53-56 p.
Keyword [en]
Silicon carbide, MAX phase, Physical vapor deposition, High temperature
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-161088DOI: 10.1016/j.scriptamat.2014.11.025ISI: 000348881100014ScopusID: 2-s2.0-84921280529OAI: diva2:797963
Swedish Foundation for Strategic Research

QC 20150325

Available from: 2015-03-25 Created: 2015-03-09 Last updated: 2015-03-25Bibliographically approved

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Smedfors, KatarinaZetterling, Carl-Mikael
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School of Information and Communication Technology (ICT)Integrated Devices and Circuits
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