Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
2015 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 99, 53-56 p.Article in journal (Refereed) Published
We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960 degrees C, based on the Ti-SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers the possibility of direct synthesis of oxygen-barrier capping layers before exposure to air, potentially improving contact stability in high-temperature and high-power devices.
Place, publisher, year, edition, pages
2015. Vol. 99, 53-56 p.
Silicon carbide, MAX phase, Physical vapor deposition, High temperature
IdentifiersURN: urn:nbn:se:kth:diva-161088DOI: 10.1016/j.scriptamat.2014.11.025ISI: 000348881100014ScopusID: 2-s2.0-84921280529OAI: oai:DiVA.org:kth-161088DiVA: diva2:797963
FunderSwedish Foundation for Strategic Research
QC 201503252015-03-252015-03-092015-03-25Bibliographically approved