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Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
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2014 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 50, no 11, 4006104Article in journal (Refereed) Published
Abstract [en]

In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.

Place, publisher, year, edition, pages
2014. Vol. 50, no 11, 4006104
Keyword [en]
Anisotropic magnetoresistance (AMR), antiferromagnetic (AFM), ferromagnetic (FM), magnetic anisotropy, magnetic sensor planar Hall effect
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-161568DOI: 10.1109/TMAG.2014.2330846ISI: 000349465900253ScopusID: 2-s2.0-84917692997OAI: diva2:798360
Swedish National Space Board

QC 20150326

Available from: 2015-03-26 Created: 2015-03-13 Last updated: 2016-05-19Bibliographically approved
In thesis
1. Fabrication and Characterization of magnetometer for space applications
Open this publication in new window or tab >>Fabrication and Characterization of magnetometer for space applications
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The present rapid increase in the number of space missions demands a decrease in the cost of satellite equipment, but also requires the development of instruments that have low power consumption, low weight, and small size.Anisotropic magnetoresistance (AMR) sensors can answer these needs on account of their small size, weight, and power consumption. AMR sensors also produce lower noise than either giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) devices and are thus more suitable for space applications.The type of AMR sensor developed in this study was a Planar Hall EffectBridge (PHEB) sensor. The FM layer was also coupled with an AFM layer in order to fix the internal magnetization of the FM layer.One technique that was employed in order to meet the low-noise requirement was to make the FM layer thicker than has previously been attempted.In doing so, the exchange bias field between the AFM layer and the FMlayer is no longer high enough to bias the thicker FM layer, so in order to correct this unwanted effect, the material stack was upgraded to two AFM–FM interfaces. With this configuration, it became possible to increase the exchange field by up to 60%. Stronger exchange bias leads to a thicker FMlayer and so to lower noise in the device performance. Another strategy that was used to lower the resistance of the device was to implement an NiFeX alloy instead of the standard NiFe. NiFeX consists of an alloy of NiFe andCu, Ag, or Au; the last of these is known to have very low resistivity.This solution leads to a significant lowering of the device’s resistance. A recent technological advance used to fabricate devices with lower resistance is to deposit a multilayer of AFM–FM.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2016. 73 p.
TRITA-ICT, 2016:15
AMR, Magnetic sensor, Ferromagnetic, Antiferromagnetic, NiFe, IrMn, exchange bias.
National Category
Condensed Matter Physics
Research subject
Physics; Materials Science and Engineering
urn:nbn:se:kth:diva-187237 (URN)ISBN 978-91-7595-982-5 (ISBN)
Public defence
2016-06-10, Sal C, Isafjordsgatan 26, Kista, 13:01 (English)
Available from: 2016-05-19 Created: 2016-05-18 Last updated: 2016-05-19Bibliographically approved

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Sani, Sohrab RedjaiChung, SunjaeLe, TuanÅkerman, Johan
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