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Hydride vapour phase epitaxy assisted buried heterostructure quantum cascade lasers for sensing applications
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA. Epiclarus AB, Sweden.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
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2015 (English)In: QUANTUM SENSING AND NANOPHOTONIC DEVICES XII, 2015, Vol. 9370, 93700DConference paper, Published paper (Refereed)
Abstract [en]

Buried heterostructure (BH) lasers are routinely fabricated for telecom applications. Development of quantum cascade lasers (QCL) for sensing applications has largely benefited from the technological achievements established for telecom lasers. However, new demands are to be met with when fabricating BH-QCLs. For example, hetero-cascade and multi-stack QCLs, with several different active regions stacked on top of each other, are used to obtain a broad composite gain or increased peak output power. Such structures have thick etch ridges which puts severe demand in carrying out regrowth of semi-insulating layer around very deeply etched (>10 mu m) ridges in short time to realize BH-QCL. For comparison, telecom laser ridges are normally only <5 mu m deep. We demonstrate here that hydride vapour phase epitaxy (HVPE) is capable of meeting this new demand adequately through the fabrication of BH-QCLs in less than 45 minutes for burying ridges etched down to 10-15 mu m deep. This has to be compared with the normally used regrowth time of several hours, e.g., in a metal organic vapour phase epitaxy (MOVPE) reactor. This includes also micro-stripe lasers resembling grating-like ridges for enhanced thermal dissipation in the lateral direction. In addition, we also demonstrate HVPE capability to realize buried heterostructure photonic crystal QCLs for the first time. These buried lasers offer flexibility in collecting light from the surface and relatively facile device characterization feasibility of QCLs in general; but the more important benefits of such lasers are enhanced light matter interaction leading to ultra-high cavity Q-factors, tight optical confinement, possibility to control the emitted mode pattern and beam shape and substantial reduction in laser threshold.

Place, publisher, year, edition, pages
2015. Vol. 9370, 93700D
Series
Proceedings of SPIE, ISSN 0277-786X
Keyword [en]
Buried heterostructure quantum cascade lasers, Micro-stripe QCL, Photonic crystal QCL
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-164012DOI: 10.1117/12.2078763ISI: 000350275500007Scopus ID: 2-s2.0-84923788577ISBN: 978-1-62841-460-8 (print)OAI: oai:DiVA.org:kth-164012DiVA: diva2:807467
Conference
Conference on Quantum Sensing and Nanophotonic Devices XII, FEB 08-12, 2015, San Francisco, CA
Note

QC 20150423

Available from: 2015-04-23 Created: 2015-04-13 Last updated: 2015-04-23Bibliographically approved

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Lourdudoss, Sebastian

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