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Characterization of high-k dielectrics using MeV elastic scattering of He ions
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
2015 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 347, 52-57 p.Article in journal (Refereed) Published
Abstract [en]

We present a systematic comparison of two distinct ion-beam based methods for composition analysis of nanometer oxide films: ion-beam channeling and elastic scattering using nuclear resonances, both at MeV energies. Thin films of the technologically highly relevant high-k dielectrics HfO2 and HfAIO are characterized in the present study, with the additional aim of obtaining a better quantification of the Al content for the latter system. We show that both employed ion scattering methods enable a quantitative determination of the oxygen concentrations with typical uncertainties of about 5-10% in the oxygen fraction. The influence of various kinds of systematic inaccuracies in the evaluation procedure are discussed.

Place, publisher, year, edition, pages
2015. Vol. 347, 52-57 p.
Keyword [en]
RBS, Channeling, EBS, Thin films, High-k dielectrics
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-163970DOI: 10.1016/j.nimb.2014.12.080ISI: 000350840200008Scopus ID: 2-s2.0-84922749076OAI: oai:DiVA.org:kth-163970DiVA: diva2:810592
Note

QC 20150507

Available from: 2015-05-07 Created: 2015-04-13 Last updated: 2017-12-04Bibliographically approved

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Dentoni Litta, Eugenio

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