Biexciton Emission as a Probe of Auger Recombination in Individual Silicon Nanocrystals
2015 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 119, no 13, 7499-7505 p.Article in journal (Refereed) Published
Biexciton emission from individual silicon nanocrystals was detected at room temperature by time-resolved, single-particle luminescence measurements. The efficiency of this process, however, was found to be very low, about 10-20 times less than the single exciton emission efficiency. It decreases even further at low temperature, explaining the lack of biexciton emission line observations in silicon nanocrystal single-dot spectroscopy under high excitation. The poor efficiency of the biexciton emission is attributed to the dominant nonradiative Auger process. Corresponding measured biexciton decay times then represent Auger lifetimes, and the values obtained here, from tens to hundreds of nanoseconds, reveal strong dot-to-dot variations, while the range compares well with recent calculations taking into account the resonant nature of the Auger process in semiconductor nanocrystals.
Place, publisher, year, edition, pages
2015. Vol. 119, no 13, 7499-7505 p.
Augers, Efficiency, Optical waveguides, Silicon, Temperature, Auger recombination, Biexciton emission, Luminescence measurements, Poor efficiencies, Room temperature, Semiconductor nanocrystals, Silicon nanocrystals, Single dot spectroscopy
Other Chemistry Topics
IdentifiersURN: urn:nbn:se:kth:diva-166326DOI: 10.1021/acs.jpcc.5b01114ISI: 000352329500060ScopusID: 2-s2.0-84926436244OAI: oai:DiVA.org:kth-166326DiVA: diva2:810847
FunderSwedish Research CouncilCarl Tryggers foundation
QC 201505082015-05-082015-05-072015-10-01Bibliographically approved