Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE , 2014, 6910789- p.Conference paper (Refereed)
An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.
Place, publisher, year, edition, pages
IEEE , 2014. 6910789- p.
Silicon Carbide (SiC), Fault handling strategy, JFET, MOSFET, BJT, Power semiconductor device, Protection device, Faults, Robustness, Safety, Wide bandgap devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Electrical Engineering; SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-166534DOI: 10.1109/EPE.2014.6910789ISI: 000361460001041ScopusID: 2-s2.0-84923870198ISBN: 978-147993015-9OAI: oai:DiVA.org:kth-166534DiVA: diva2:811202
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
QC 201505112015-05-112015-05-112016-02-26Bibliographically approved