An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE conference proceedings, 2014, 6911042- p.Conference paper (Refereed)
Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 6911042- p.
Silicon Carbid (SiC)
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-166546DOI: 10.1109/EPE.2014.6911042ISI: 000361460005028ScopusID: 2-s2.0-84923870193ISBN: 978-147993015-9OAI: oai:DiVA.org:kth-166546DiVA: diva2:811232
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
QC 201505112015-05-112015-05-112015-10-16Bibliographically approved