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An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-6184-6470
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2014 (English)In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE conference proceedings, 2014, 6911042- p.Conference paper, Published paper (Refereed)
Abstract [en]

Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 6911042- p.
Keyword [en]
Silicon Carbid (SiC)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-166546DOI: 10.1109/EPE.2014.6911042ISI: 000361460005028Scopus ID: 2-s2.0-84923870193ISBN: 978-147993015-9 (print)OAI: oai:DiVA.org:kth-166546DiVA: diva2:811232
Conference
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26 August 2014 through 28 August 2014
Note

QC 20150511

Available from: 2015-05-11 Created: 2015-05-11 Last updated: 2015-10-16Bibliographically approved
In thesis
1. High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Open this publication in new window or tab >>High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments.

The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented.

The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.

 The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction.

Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM).

The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xiv, 71 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2015:024
Keyword
Silicon Carbide, Bipolar Junction Transistor (BJT), Resonant converter, Series-resonant converter (SLR), Base drive circuits, High- Efficiency Converters, High-Frequency Converters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-168163 (URN)978-91-7595-601-5 (ISBN)
Public defence
2015-06-12, H1, Teknikringen 33, KTH, Stockholm, 09:45 (English)
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Supervisors
Note

QC 20150529

Available from: 2015-05-29 Created: 2015-05-27 Last updated: 2015-05-29Bibliographically approved

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Tolstoy, GeorgColmenares, JuanNee, Hans-Peter

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