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Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2015 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 4, no 5, P119-P123 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the effects of carbon pre-geramanidation implantation on the thermal stability of NiGe and dopant segregation on both ntype and p-type Ge substrate were investigated systematically. As-prepared NiGe films with carbon pre-germanidation implantation to different doses were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of carbon is proved to improve the thermal stability of NiGe formed on both n-and p-type Ge significantly, as well as to lead to dopant segregation (DS) of P and B at the NiGe/Ge interface. The homogeneous distribution of C within NiGe films and stuffing of C atoms at the NiGe/Ge interface is responsible for the enhanced thermal stability of NiGe and DS of P and B during germanidation process. (C) The Author(s) 2015. Published by ECS. All rights reserved.

Place, publisher, year, edition, pages
2015. Vol. 4, no 5, P119-P123 p.
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Materials Engineering
URN: urn:nbn:se:kth:diva-166515DOI: 10.1149/2.0041505jssISI: 000352224200009ScopusID: 2-s2.0-84928342979OAI: diva2:811618

QC 20150512

Available from: 2015-05-12 Created: 2015-05-11 Last updated: 2015-05-12Bibliographically approved

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Radamson, Henry
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