Characterization of bonding surface and electrical insulation properties of inter layer dielectrics for 3D monolithic integration
2015 (English)In: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015, 165-168 p.Conference paper (Refereed)
We investigate the bonding and electrical insulation properties of oxide layers for use in 3D monolithic integration via direct wafer bonding. Low surface roughness layers deposited on 100 mm Si wafers by atomic layer deposition (ALD) at 200 °C-350 °C, provide with adequate layer transfer bonding interfaces. Wafer scale IV measurements were performed to investigate the leakage current. We demonstrate that ALD oxide can function as a reliable bonding surface and also exhibit leakage current values below the nA range. Both properties are important pillars for a successful 3D monolithic integration.
Place, publisher, year, edition, pages
2015. 165-168 p.
3D integration, atomic layer deposition, current leakage, defects, Ge, GeOI, inter layer dielectrics, monolithic, strained Ge, wafer bonding, Deposition, Germanium, Integration, Leakage (fluid), Monolithic integrated circuits, Silicon wafers, Surface roughness, Three dimensional integrated circuits, 3-D integration, Inter-layer dielectrics, Strained-Ge
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-167390DOI: 10.1109/ULIS.2015.7063799ISI: 000380427400042ScopusID: 2-s2.0-84926444085ISBN: 9781479969111OAI: oai:DiVA.org:kth-167390DiVA: diva2:815212
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015; Bologna; Italy; 26 January 2015 through 28 January 2015
QC 201505292015-05-292015-05-222016-09-02Bibliographically approved