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Carrier lifetimes and influence of in-grown defects in N-B Co-doped 6H-SiC
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, 2014, Vol. 56, no 1Conference paper (Refereed)
Abstract [en]

The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.

Place, publisher, year, edition, pages
2014. Vol. 56, no 1
, IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981 ; 012004
Keyword [en]
Energy gap, Light emission, Silicon carbide, Solar cells, Diffusion driven, Donor-acceptor pairs, Electron lifetime, Free carrier absorption, Measurement geometry, Non-radiative recombinations, Sublimation growth, Surface recombinations, Carrier lifetime
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-167561DOI: 10.1088/1757-899X/56/1/012004ISI: 000338125900004ScopusID: 2-s2.0-84902209266OAI: diva2:816147
Symposium G on Alternative Approaches of SiC and Related Wide Bandgap Materials in Light Emitting and Solar Cell Applications, Held at the EMRS 2013 Spring Meeting, 27 May 2013 through 31 May 2013, Strasbourg

QC 20150602

Available from: 2015-06-02 Created: 2015-05-22 Last updated: 2015-06-02Bibliographically approved

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Linnarsson, Margareta
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Integrated Devices and Circuits
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ReferencesLink to record
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