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A quick and a flexible hydride vapor phase epitaxy process to achieve buried heterostructure quantum cascade lasers
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2014 (English)In: ECS Transactions, Electrochemical Society, 2014, no 17, 61-68 p.Conference paper (Refereed)
Abstract [en]

BH-QCLs were fabricated with regrowth of semi-insulating InP:Fe in hydride vapor phase epitaxy reactor. Two types of lateral ridge QCL designs were considered: (i) closely spaced ridges with double trenches and (ii) widely and uniformly spaced ridges. The etched depth varies from 6 to 15 μm in the former and 6 to10 μm in the latter. Double trenches of about 14 μm deep take only < 40 minutes to planarize while the same time is needed to planarize about 8 μm deep trenches with uniform ridges. In any case the achieved growth rate is higher by at least one order of magnitude than that can be achieved in MBE and MOVPE. Some fabricated BH-QCLs are characterized and they exhibit spatially monomode (TMoo) laser with an output power of as high as 2.4 W and wall plug efficiency of ∼8-9% at RT under CW operation.

Place, publisher, year, edition, pages
Electrochemical Society, 2014. no 17, 61-68 p.
Keyword [en]
Epitaxial growth, Hydrides, Quantum cascade lasers, Vapor phase epitaxy, Buried heterostructures, CW operation, Deep trench, Hydride vapor phase epitaxy, InP, Output power, Semi-insulating, Wallplug efficiency, Semiconductor lasers
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-167966DOI: 10.1149/06417.0061ecstScopusID: 2-s2.0-84921284622OAI: diva2:816810
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014

QC 20150604

Available from: 2015-06-04 Created: 2015-05-22 Last updated: 2015-06-04Bibliographically approved

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