Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A quick and a flexible hydride vapor phase epitaxy process to achieve buried heterostructure quantum cascade lasers
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
Show others and affiliations
2014 (English)In: ECS Transactions, Electrochemical Society, 2014, no 17, 61-68 p.Conference paper, Published paper (Refereed)
Abstract [en]

BH-QCLs were fabricated with regrowth of semi-insulating InP:Fe in hydride vapor phase epitaxy reactor. Two types of lateral ridge QCL designs were considered: (i) closely spaced ridges with double trenches and (ii) widely and uniformly spaced ridges. The etched depth varies from 6 to 15 μm in the former and 6 to10 μm in the latter. Double trenches of about 14 μm deep take only < 40 minutes to planarize while the same time is needed to planarize about 8 μm deep trenches with uniform ridges. In any case the achieved growth rate is higher by at least one order of magnitude than that can be achieved in MBE and MOVPE. Some fabricated BH-QCLs are characterized and they exhibit spatially monomode (TMoo) laser with an output power of as high as 2.4 W and wall plug efficiency of ∼8-9% at RT under CW operation.

Place, publisher, year, edition, pages
Electrochemical Society, 2014. no 17, 61-68 p.
Keyword [en]
Epitaxial growth, Hydrides, Quantum cascade lasers, Vapor phase epitaxy, Buried heterostructures, CW operation, Deep trench, Hydride vapor phase epitaxy, InP, Output power, Semi-insulating, Wallplug efficiency, Semiconductor lasers
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-167966DOI: 10.1149/06417.0061ecstScopus ID: 2-s2.0-84921284622OAI: oai:DiVA.org:kth-167966DiVA: diva2:816810
Conference
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Note

QC 20150604

Available from: 2015-06-04 Created: 2015-05-22 Last updated: 2015-06-04Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Lourdudoss, Sebastian

Search in DiVA

By author/editor
Metaferia, WondwosenLourdudoss, Sebastian
By organisation
Materials- and Nano PhysicsSemiconductor Materials, HMA
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 19 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf