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Raman scattering and carrier diffusion study in heavily Co-doped 6H-SiC layers
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, 2014, Vol. 56, no 1Conference paper (Refereed)
Abstract [en]

Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of ≈1019 cm-3 and (4·1016- 5·1018) cm-3 concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 μm thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm2/s to virtually 0 cm2/s with boron concentration increasing by two orders.

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2014. Vol. 56, no 1
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URN: urn:nbn:se:kth:diva-168108DOI: 10.1088/1757-899X/56/1/012005ISI: 000338125900005ScopusID: 2-s2.0-84902211918OAI: diva2:817102
Symposium G on Alternative Approaches of SiC and Related Wide Bandgap Materials in Light Emitting and Solar Cell Applications, Held at the EMRS 2013 Spring Meeting; Strasbourg; France

QC 20150604

Available from: 2015-06-04 Created: 2015-05-27 Last updated: 2015-06-04Bibliographically approved

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Linnarsson, Margareta K.
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Integrated Devices and Circuits
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