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Temperature dependencies of free-carrier-absorption lifetime in fluorescent 6H-SiC layers
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, 2014, no 1Conference paper (Refereed)
Abstract [en]

The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred us-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.

Place, publisher, year, edition, pages
2014. no 1
Keyword [en]
Energy gap, Light emission, Semiconductor junctions, Solar cells, High injection, Hole recombination, Nonradiative decays, Recombination channels, Temperature dependencies, Thermal activation, Visible emissions, Wide temperature ranges, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-167955DOI: 10.1088/1757-899X/56/1/012006ISI: 000338125900006ScopusID: 2-s2.0-84902194001OAI: diva2:817163
Symposium G on Alternative Approaches of SiC and Related Wide Bandgap Materials in Light Emitting and Solar Cell Applications, Held at the EMRS 2013 Spring Meeting, 27 May 2013 through 31 May 2013, Strasbourg

QC 20150604

Available from: 2015-06-04 Created: 2015-05-22 Last updated: 2015-06-04Bibliographically approved

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Linnarsson, Margareta
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ReferencesLink to record
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