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Recent advances in high-k dielectrics and inter layer engineering
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
2014 (English)In: Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, 2014Conference paper, Published paper (Refereed)
Abstract [en]

State-of-the-art CMOS technology relies on the integration of multi-layer high-k/metal gate stacks in order to achieve high capacitance density while fulfilling the requirements in terms of gate leakage current density, interface state density, channel mobility, threshold voltage and reliability. Conventional SiOx/HfO2 gate dielectric stacks are capable of meeting the performance targets of current technology nodes and have been shown to possess sufficient short-term scalability, but solutions providing enhanced long-term scalability are actively researched, mostly via integration of higher-k oxides or high-k interfacial layers. This paper provides an overview of recent research efforts in this area, focusing on integration of high-k interfacial layers. We then analyze the potential scalability improvement which can be obtained through integration of thulium silicate as interfacial layer and summarize the main results supporting its applicability to future technology nodes.

Place, publisher, year, edition, pages
2014.
Keyword [en]
CMOS integrated circuits, Dielectric materials, Gate dielectrics, Leakage currents, Scalability, Silicates, Threshold voltage, Current technology, Future technologies, Gate dielectric stacks, Gate leakage current density, High-capacitance density, High-k/metal gates, Interface state density, Performance targets, Interface states
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-168352DOI: 10.1109/ICSICT.2014.7021327Scopus ID: 2-s2.0-84946690008ISBN: 9781479932962 (print)OAI: oai:DiVA.org:kth-168352DiVA: diva2:817453
Conference
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, 28 October 2014 through 31 October 2014
Note

QC 20150605

Available from: 2015-06-05 Created: 2015-06-02 Last updated: 2015-06-05Bibliographically approved

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Dentoni Litta, EugenioHellström, Per-Erik

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