Recent Advances in Power Semiconductor Technology
2014 (English)In: Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications, Wiley-Blackwell, 2014, 69-106 p.Chapter in book (Other academic)
This chapter presents recent advances in power semiconductors technology with special attention on wide bandgap (WBG) transistors. A short introduction to the state-of-the-art Silicon power devices is given, and the characteristics of the various SiC power switches are also described. Design considerations of gate and base-drive circuits for various SiC power switches along with experimental results of their switching performance are presented in details. Moreover, a section on applications of SiC power devices is also included, where the three design directions (high-efficiency, high switching frequency and high-temperature) that might be followed using SiC technology are shown. Last but not least, a short overview of Gallium Nitride transistors is presented in the last section of this chapter.
Place, publisher, year, edition, pages
Wiley-Blackwell, 2014. 69-106 p.
Gallium nitride, Gate/base drivers, Parallel-connection, Power semiconductor devices, Power transistors, Silicon carbide, Wide bandgap devices
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-168341DOI: 10.1002/9781118755525.ch4ScopusID: 2-s2.0-84927684012ISBN: 9781118755525ISBN: 9781118634035OAI: oai:DiVA.org:kth-168341DiVA: diva2:818053
QC 201506082015-06-082015-06-022015-11-17Bibliographically approved