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Recent Advances in Power Semiconductor Technology
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion. Warsaw University of Technology, Poland .
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2014 (English)In: Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications, Wiley-Blackwell, 2014, 69-106 p.Chapter in book (Other academic)
Abstract [en]

This chapter presents recent advances in power semiconductors technology with special attention on wide bandgap (WBG) transistors. A short introduction to the state-of-the-art Silicon power devices is given, and the characteristics of the various SiC power switches are also described. Design considerations of gate and base-drive circuits for various SiC power switches along with experimental results of their switching performance are presented in details. Moreover, a section on applications of SiC power devices is also included, where the three design directions (high-efficiency, high switching frequency and high-temperature) that might be followed using SiC technology are shown. Last but not least, a short overview of Gallium Nitride transistors is presented in the last section of this chapter.

Place, publisher, year, edition, pages
Wiley-Blackwell, 2014. 69-106 p.
Keyword [en]
Gallium nitride, Gate/base drivers, Parallel-connection, Power semiconductor devices, Power transistors, Silicon carbide, Wide bandgap devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-168341DOI: 10.1002/9781118755525.ch4Scopus ID: 2-s2.0-84927684012ISBN: 9781118755525 (print)ISBN: 9781118634035 (print)OAI: oai:DiVA.org:kth-168341DiVA: diva2:818053
Note

QC 20150608

Available from: 2015-06-08 Created: 2015-06-02 Last updated: 2015-11-17Bibliographically approved

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Nee, Hans-Peter

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