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Observation of optically induced transparency effect in silicon nanophotonic wires with graphene
Zhejiang Univ. (China).
Zhejiang Univ. (China).
Zhejiang Univ. (China).
Zhejiang Univ. (China).
2014 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, 2014Conference paper (Refereed)
Abstract [en]

Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as ~0.1mW and the corresponding power density is about 2×10 3mW/cm2, which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.

Place, publisher, year, edition, pages
Keyword [en]
all-optical, graphene, junction, low power, optically induced transparency, silicon nanophotonic wire, Integrated optoelectronics, Nanophotonics, Silicon, Transparency, Two dimensional, Wire, Fabrication process, Optically induced, Power densities, Saturated absorptions, Wavelength ranges
National Category
Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-167932DOI: 10.1117/12.2047618ISI: 000336802200008ScopusID: 2-s2.0-84901723101ISBN: 9780819499028OAI: diva2:818065
Smart Photonic and Optoelectronic Integrated Circuits XVI, 5 February 2014 through 6 February 2014, San Francisco, CA

QC 20150608

Available from: 2015-06-08 Created: 2015-05-22 Last updated: 2015-06-08Bibliographically approved

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He, Sailing
Atom and Molecular Physics and Optics

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