Interface engineering routes for a future cmos ge-based technology
2014 (English)In: ECS Transactions, 2014, no 2, 73-88 p.Conference paper (Refereed)
We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.
Place, publisher, year, edition, pages
2014. no 2, 73-88 p.
Absorption spectroscopy, Characterization, Energy gap, Germanium, High resolution transmission electron microscopy, Manufacture, Nanosystems, Spectroscopic ellipsometry, Absorption features, Barrier layers, Crystallinities, Electrical characterization, Interface engineering, Interfacial composition, Valence band offsets, Variable angle spectroscopic ellipsometry, X ray photoelectron spectroscopy
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-167921DOI: 10.1149/06102.0073ecstISI: 000339377500008ScopusID: 2-s2.0-84925091601OAI: oai:DiVA.org:kth-167921DiVA: diva2:818184
6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting, 11 May 2014 through 15 May 2014
QC 201506082015-06-082015-05-222015-06-08Bibliographically approved