Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Interface engineering routes for a future cmos ge-based technology
Show others and affiliations
2014 (English)In: ECS Transactions, 2014, no 2, 73-88 p.Conference paper, Published paper (Refereed)
Abstract [en]

We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.

Place, publisher, year, edition, pages
2014. no 2, 73-88 p.
Keyword [en]
Absorption spectroscopy, Characterization, Energy gap, Germanium, High resolution transmission electron microscopy, Manufacture, Nanosystems, Spectroscopic ellipsometry, Absorption features, Barrier layers, Crystallinities, Electrical characterization, Interface engineering, Interfacial composition, Valence band offsets, Variable angle spectroscopic ellipsometry, X ray photoelectron spectroscopy
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-167921DOI: 10.1149/06102.0073ecstISI: 000339377500008Scopus ID: 2-s2.0-84925091601OAI: oai:DiVA.org:kth-167921DiVA: diva2:818184
Conference
6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting, 11 May 2014 through 15 May 2014
Note

QC 20150608

Available from: 2015-06-08 Created: 2015-05-22 Last updated: 2015-06-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Litta, Eugenio D.Hellström, Per-Erik

Search in DiVA

By author/editor
Henkel, ChristophLitta, Eugenio D.Hellström, Per-ErikÖstling, Mikael
By organisation
Integrated Devices and Circuits
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 86 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf