Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
2015 (English)In: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015, 81-84 p.Conference paper (Refereed)
We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.
Place, publisher, year, edition, pages
2015. 81-84 p.
Carrier mobility, Defect density, Defects, Graphene, Hot carriers, Bias stress, Charged defect density, Density variations, Graphene field effect transistor (GFETs), Graphene field-effect transistors, Hot carrier degradation, Hot carrier stress, Mobility degradation, Field effect transistors
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-168326DOI: 10.1109/ULIS.2015.7063778ISI: 000380427400021ScopusID: 2-s2.0-84926435163ISBN: 9781479969111OAI: oai:DiVA.org:kth-168326DiVA: diva2:818327
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, 26 January 2015 through 28 January 2015
QC 201506082015-06-082015-06-022016-09-02Bibliographically approved