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Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor
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2014 (English)In: Materials Research Society Symposium Proceedings, 2014Conference paper, Published paper (Refereed)
Abstract [en]

The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Place, publisher, year, edition, pages
2014.
Keyword [en]
Devices, electrical properties, neutron irradiation, Electric properties, Irradiation, Isotopes, Neutron sources, Neutrons, Nuclear reactors, Semiconductor junctions, Silicon, Silicon carbide, Detector response, Device detectors, Irradiation test, Neutron converters, Reverse voltage bias, Thermal neutrons, Thermal-neutron detection
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-167920DOI: 10.1557/opl.2014.691Scopus ID: 2-s2.0-84924530110OAI: oai:DiVA.org:kth-167920DiVA: diva2:818333
Conference
2014 MRS Spring Meeting, 21 April 2014 through 25 April 2014
Note

QC 20150608

Available from: 2015-06-08 Created: 2015-05-22 Last updated: 2015-06-08Bibliographically approved

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Hallén, Anders

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