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Nuclear radiation detectors based on 4H-SiC p+-n junction
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2014 (English)In: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, 2014, p. 1046-1049Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Place, publisher, year, edition, pages
2014. p. 1046-1049
Keyword [en]
4H-SiC, Implantation, Leakage current, Neutron converter layer, Pn diodes, Space charge region, Thermal neutrons, Ion implantation, Leakage currents, Neutron sources, Neutrons, Nuclear radiation spectroscopy, Neutron converters, P-n Diode, Space charge regions, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-167910DOI: 10.4028/www.scientific.net/MSF.778-780.1046ISI: 000336634100249Scopus ID: 2-s2.0-84896092875ISBN: 9783038350101 (print)OAI: oai:DiVA.org:kth-167910DiVA, id: diva2:818359
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, 29 September - 4 October 2013, Miyazaki
Note

QC 20150608

Available from: 2015-06-08 Created: 2015-05-22 Last updated: 2015-06-08Bibliographically approved

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Hallén, Anders

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