Nuclear radiation detectors based on 4H-SiC p+-n junction
2014 (English)In: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, 2014, 1046-1049 p.Conference paper (Refereed)
Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
Place, publisher, year, edition, pages
2014. 1046-1049 p.
4H-SiC, Implantation, Leakage current, Neutron converter layer, Pn diodes, Space charge region, Thermal neutrons, Ion implantation, Leakage currents, Neutron sources, Neutrons, Nuclear radiation spectroscopy, Neutron converters, P-n Diode, Space charge regions, Silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-167910DOI: 10.4028/www.scientific.net/MSF.778-780.1046ISI: 000336634100249ScopusID: 2-s2.0-84896092875ISBN: 9783038350101OAI: oai:DiVA.org:kth-167910DiVA: diva2:818359
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, 29 September - 4 October 2013, Miyazaki
QC 201506082015-06-082015-05-222015-06-08Bibliographically approved