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The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, 2014, no 1Conference paper (Refereed)
Abstract [en]

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

Place, publisher, year, edition, pages
2014. no 1
Keyword [en]
Defects, Energy gap, Fluorescence, Light, Light emission, Light emitting diodes, Semiconductor doping, Solar cells, Dislocation densities, Donor-acceptor pairs, Doping concentration, Gas phase composition, Internal quantum efficiency, Non-radiative lifetimes, Photoluminescence intensities, Sublimation epitaxy, Silicon carbide
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-167902DOI: 10.1088/1757-899X/56/1/012002ISI: 000338125900002ScopusID: 2-s2.0-84902129680OAI: diva2:818874
Symposium G on Alternative Approaches of SiC and Related Wide Bandgap Materials in Light Emitting and Solar Cell Applications, Held at the EMRS 2013 Spring Meeting, 27 May 2013 through 31 May 2013, Strasbourg

QC 20150609

Available from: 2015-06-09 Created: 2015-05-22 Last updated: 2015-06-09Bibliographically approved

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Linnarsson, Margareta
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Integrated Devices and Circuits
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