Monolithic integration of InP based structures on silicon for optical interconnects
2014 (English)In: 2014 ECS and SMEQ Joint International Meeting, 2014, no 6, 523-531 p.Conference paper (Refereed)
Monolithic integration of InP based structures on Si for optical interconnects is presented. Different strategies are demonstrated to achieve requisite InP platform on Si. In the first strategy, defect free isolated areas of epitaxially and laterally overgrown InP are obtained on Si and the InGaAsP based quantum wells directly grown on these templates have shown high material quality with uniform interfaces. In the second strategy, selective area growth is exploited to achieve InP nano pyramids on Si which can be used for the growth of quantum dot structures. In the third and the final strategy, a method is presented to achieve direct interface between InP and Si using corrugated epitaxial lateral overgrowth.
Place, publisher, year, edition, pages
2014. no 6, 523-531 p.
, ECS Transactions, ISSN 1938-5862 ; 64:6
Germanium, Interfaces (materials), Optical interconnects, Semiconductor quantum dots, Silicon, Silicon alloys, Epitaxial lateral overgrowth, InP-based structure, Material quality, Monolithic integration, Nano-pyramids, Quantum dot structure, Selective area growth, Uniform interface, Monolithic integrated circuits
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-168877DOI: 10.1149/06406.0523ecstScopusID: 2-s2.0-84921307185OAI: oai:DiVA.org:kth-168877DiVA: diva2:819464
6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
QC 201506102015-06-102015-06-092015-06-10Bibliographically approved