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SiC power devices in a soft switching converter including aspects on packaging
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2014 (English)In: ECS Transactions, 2014, Vol. 64, no 7, 51-59 p.Conference paper, Published paper (Refereed)
Abstract [en]

In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.

Place, publisher, year, edition, pages
2014. Vol. 64, no 7, 51-59 p.
Series
ECS Transactions, ISSN 1938-5862 ; 7
Keyword [en]
Gallium nitride, MOSFET devices, Nitrides, Power converters, Power electronics, Rectifying circuits, Semiconductor diodes, Silicon, Soft switching, Switching circuits, Switching frequency, Active switches, Figures of merits, High frequency operation, Industrial power supplies, Power electronic converters, Power semiconductors, SiC PiN diodes, Softswitching converters, Silicon carbide
National Category
Energy Engineering
Identifiers
URN: urn:nbn:se:kth:diva-167515DOI: 10.1149/06407.0051ecstScopus ID: 2-s2.0-84921061985OAI: oai:DiVA.org:kth-167515DiVA: diva2:819775
Conference
Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Note

QC 20150611

Available from: 2015-06-11 Created: 2015-05-22 Last updated: 2015-06-11Bibliographically approved

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Tolstoy, Georg

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