Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fabrications of size-controlled SiGe nanowires using I-line lithography and focused ion beam technique
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.ORCID iD: 0000-0003-0493-7792
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Functional Materials, FNM (Closed 20120101).ORCID iD: 0000-0001-5678-5298
Show others and affiliations
2014 (English)In: ECS Transactions, 2014, no 6, 167-174 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this study, a novel method using Focus Ion Beam (FIB) technique was applied to scale down Si1-xGex wires (x=0.27-0.57) to 20 nm width. Originally, the wires were processed by using Iline lithography and dry etching of SiGe on oxide (SGOI) substrates. The SGOI wafers were processed through condensation method where a SiGe/Si layer was grown in the beginning on SOI wafers and oxidized at 850-1050 °C. The shape of the nanowires (NWs) during the successive FIB cutting was examined by scanning electron microscopy (SEM) and the carrier transport through the NWs was checked by resistivity measurements. The contact resistance was reduced by Ni-silicide prior to metallization. The fabricated NWs were also suspended by tilting FIB. The results present the limitations and challenges of FIB technique to create NWs for advanced sensors and transistors.

Place, publisher, year, edition, pages
2014. no 6, 167-174 p.
Keyword [en]
Focused ion beams, Germanium, Nanowires, Scanning electron microscopy, Silicides, Silicon alloys, Silicon wafers, Wire, Advanced sensors, Fib cuttings, Focus ion beam, Focused ion beam technique, I-line lithography, Nanowires (NWs), Resistivity measurement, Si-Ge nanowires, Ion beams
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-167899DOI: 10.1149/06406.0167ecstScopus ID: 2-s2.0-84921294515OAI: oai:DiVA.org:kth-167899DiVA: diva2:820136
Conference
6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Note

QC 20150611

Available from: 2015-06-11 Created: 2015-05-22 Last updated: 2015-06-11Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Ergül, AdemToprak, Muhammet S

Search in DiVA

By author/editor
Noroozi, MohammadErgül, AdemAbedin, AhmedToprak, Muhammet SRadamson, Henry
By organisation
Functional Materials, FNMIntegrated Devices and CircuitsFunctional Materials, FNM (Closed 20120101)
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 35 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf