Fabrications of size-controlled SiGe nanowires using I-line lithography and focused ion beam technique
2014 (English)In: ECS Transactions, 2014, no 6, 167-174 p.Conference paper (Refereed)
In this study, a novel method using Focus Ion Beam (FIB) technique was applied to scale down Si1-xGex wires (x=0.27-0.57) to 20 nm width. Originally, the wires were processed by using Iline lithography and dry etching of SiGe on oxide (SGOI) substrates. The SGOI wafers were processed through condensation method where a SiGe/Si layer was grown in the beginning on SOI wafers and oxidized at 850-1050 °C. The shape of the nanowires (NWs) during the successive FIB cutting was examined by scanning electron microscopy (SEM) and the carrier transport through the NWs was checked by resistivity measurements. The contact resistance was reduced by Ni-silicide prior to metallization. The fabricated NWs were also suspended by tilting FIB. The results present the limitations and challenges of FIB technique to create NWs for advanced sensors and transistors.
Place, publisher, year, edition, pages
2014. no 6, 167-174 p.
Focused ion beams, Germanium, Nanowires, Scanning electron microscopy, Silicides, Silicon alloys, Silicon wafers, Wire, Advanced sensors, Fib cuttings, Focus ion beam, Focused ion beam technique, I-line lithography, Nanowires (NWs), Resistivity measurement, Si-Ge nanowires, Ion beams
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-167899DOI: 10.1149/06406.0167ecstScopusID: 2-s2.0-84921294515OAI: oai:DiVA.org:kth-167899DiVA: diva2:820136
6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
QC 201506112015-06-112015-05-222015-06-11Bibliographically approved