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Spatial variations of optical properties of semipolar InGaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-5007-6893
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2015 (English)In: Gallium Nitride Materials and Devices X, SPIE - International Society for Optical Engineering, 2015, Vol. 9363, 93631UConference paper, Published paper (Refereed)
Abstract [en]

Spatial variations of band potentials and properties of carrier recombination were examined in semipolar (20 (2) over bar1) plane InGaN/GaN single quantum wells by scanning near-field photoluminescence (PL) spectroscopy. The quantum wells had In content from 0.11 to 0.36 and were emitting from violet to yellow-green. Near-field scans showed small PL peak energy and linewidth variations with standard deviations below 10 meV, which confirms small alloy composition variations in the quantum wells. The scans revealed large, similar to 5 to 10 mu m size areas of similar PL parameter values, as opposed to 100 nm scale variations, often reported for InGaN wells. With increased excitation power, an untypical photoluminescence peak energy shift to lower energies was observed. The shift was attributed to density dependent carrier redistribution between nm-scale sites of different potentials. The experimental results show that in the (20 (2) over bar1) plane InGaN quantum wells the localization potentials are shallow and the recombination properties are spatially rather uniform, which confirms the high potential of these QWs for photonic applications.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2015. Vol. 9363, 93631U
Series
Proceedings of SPIE, ISSN 0277-786X ; 9363
Keyword [en]
InGaN, quantum well, semipolar, photoluminescence, near-field, SNOM, LED
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URN: urn:nbn:se:kth:diva-169158DOI: 10.1117/12.2076973ISI: 000354279300029ISBN: 978-1-62841-453-0 (print)OAI: oai:DiVA.org:kth-169158DiVA: diva2:820456
Conference
Conference on Gallium Nitride Materials and Devices X, February 09-12, 2015, San Francisco, CA
Note

QC 20150612

Available from: 2015-06-12 Created: 2015-06-11 Last updated: 2015-06-12Bibliographically approved

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Marcinkevicius, Saulius

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