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Design, fabrication and analysis of high speed semiconductor lasers for optical communication
KTH, Superseded Departments, Electronics.
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH , 1997. , 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-2589ISBN: 99-2488536-8 OAI: oai:DiVA.org:kth-2589DiVA: diva2:8231
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved
List of papers
1. 10Gb/s over 60 km standard single mode fibre at 1.55 μm with a direct modulated DBR laser
Open this publication in new window or tab >>10Gb/s over 60 km standard single mode fibre at 1.55 μm with a direct modulated DBR laser
1998 (English)In: Conference on optical fiber communication, feb 22-27, San Jose, CA, USA, 1998Conference paper, Published paper (Other academic)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-12536 (URN)
Note
QC 20100504Available from: 2010-05-04 Created: 2010-05-04 Last updated: 2010-05-07Bibliographically approved
2. 1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
Open this publication in new window or tab >>1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
Show others...
1991 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 59, no 3, 235-255 p.Article in journal (Refereed) Published
Abstract [en]

A GaInAsP/InP Fabry-Perot-type buried-heterostructure quantum well laser operating at 1.55 μm has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300 μm length with a quantum efficiency of 21% per facet. Threshold currents lie between 20 and 25 mA. As low as 2 Ω series resistance has been measured despite an ohmic contact area not exceeding that of the 2-μm-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12510 (URN)10.1063/1.105612 (DOI)
Note

QC 20100429

Available from: 2010-04-29 Created: 2010-04-29 Last updated: 2014-10-03Bibliographically approved
3. Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in <110> and <-110> directions by hydride vapour phase epitaxy
Open this publication in new window or tab >>Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in <110> and <-110> directions by hydride vapour phase epitaxy
1992 (English)In: Indium Phosphide and Related Materials, 1992., Fourth International Conference on, 1992, 48-50 p.Conference paper, Published paper (Other academic)
Abstract [en]

Hydride vapor phase epitaxy (HVPE) has been used for regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in <110> and <-110> directions. The regrowth morphology and the electrical properties are similar in both cases. It is also demonstrated that HVPE is a quick and easy technique to realize buried heterostructure (BH) lasers in both <110> and <-110> directions

Keyword
III-V semiconductors, indium compounds, iron, semiconductor doping, semiconductor growth, vapour phase epitaxial growth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12519 (URN)10.1109/ICIPRM.1992.235708 (DOI)4474465 (INSPEC) (Local ID)0-7803-0522-1 (ISBN)4474465 (INSPEC) (Archive number)4474465 (INSPEC) (OAI)
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2010-05-07Bibliographically approved
4. Extremely Low Parasitic 1.55 mm Lasers for Direct Amplitude High Frequency Modulation up to 20 GHz
Open this publication in new window or tab >>Extremely Low Parasitic 1.55 mm Lasers for Direct Amplitude High Frequency Modulation up to 20 GHz
Show others...
1992 (English)In: ECOC'93 , vol. 2: 19th European Conference on Optical Communication, Montreux, Switzerland, 1992, 201-204 p.Conference paper, Published paper (Other academic)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12520 (URN)
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2010-05-07Bibliographically approved
5. Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
Open this publication in new window or tab >>Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
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1996 (English)In: Proc. SPIE, Vol. 2684, 1996, 138-152 p.Conference paper, Published paper (Other academic)
Abstract [en]

Resultsfrom modulation measurements of 40 high-speed multi quantum well (MQW)lasers ((lambda) equals 1.55 micrometer) of various designs are presented.By fitting the careful calibrated measurements, both magnitude and phase,to an analytical transfer function we were able to determineif a certain laser was limited by thermal effects, parasitic-likeeffects, or nonlinear gain effects. We found that most ofthe devices in the study were limited by thermal effectsand/or contact parasitics. The parasitics were found to be determinedby the width of the high-doped contact layer and claddinglayers below the metallic contact. It was also found thata high doping of the separate confinement heterostructure (SCH) layersdecreases the damping of the relaxation peak since it facilitatesthe carrier transport. Improved contact design and high doped SCH-layersresulted in modulation bandwidths of around 24 GHz.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12522 (URN)10.1117/12.236941 (DOI)
Conference
SPIE
Note
QC 20100503 NR 20140804Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2012-02-14Bibliographically approved
6. 30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1.55 μm wavelength
Open this publication in new window or tab >>30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1.55 μm wavelength
Show others...
1997 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 33, 488-489 p.Article in journal (Refereed) Published
Abstract [en]

An increased resonance frequency and reduced damping of theresonance peak leading to a record high modulation bandwidth of30GHz were observed in 1.55 mm InGaAsP DBR lasers. Theseresults are attributed to the mechanism of detuned loading.

National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-12530 (URN)
Note
QC 20100504Available from: 2010-05-04 Created: 2010-05-04 Last updated: 2010-05-07Bibliographically approved
7. Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
Open this publication in new window or tab >>Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
Show others...
1994 (English)In:  Semiconductor Laser Conference, 1994: 14th IEEE International, 1994, 221-222 p.Conference paper, Published paper (Other academic)
Abstract [en]

Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA1/2 and high maximum bandwidth, 21.7 GHz, have been fabricated

Keyword
III-V semiconductors, distributed feedback lasers, gallium arsenide, gallium compounds, indium compounds, quantum well lasers
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12521 (URN)10.1109/ISLC.1994.519343 (DOI)0-7803-1754-8 (ISBN)
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2010-05-07Bibliographically approved
8. 24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes
Open this publication in new window or tab >>24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes
Show others...
1997 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 9, no 3, 306-308 p.Article in journal (Refereed) Published
Keyword
optical communication, optical interconnects, optical lasers, optical modulation, optical transmitters; packaging
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12537 (URN)10.1109/68.556055 (DOI)
Note
QC 20100507 NR 20140804Available from: 2010-05-07 Created: 2010-05-04 Last updated: 2012-02-14Bibliographically approved
9. An investigation on hydride VPE growth and properties of semi-insulating InP:Fe
Open this publication in new window or tab >>An investigation on hydride VPE growth and properties of semi-insulating InP:Fe
1990 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 19, no 9, 981-987 p.Article in journal (Refereed) Published
Abstract [en]

Growth of highly resistive semi-insulating InP : Fe has been achieved by the Hydride VPE technique in an ambient consisting mostly of nitrogen. After dealing with some thermodynamic considerations pertinent to InP:Fe growth, the experimental growth parameters are described. It is shown that various amounts of iron can be introduced into the InP crystal just by varying the temperature of the iron source. The crystal quality of the grown material is estimated to be good by etch pit density and x-ray diffraction analyses. Current-voltage behaviour and capacitance studies on an n+-SI-n+ structure are explained by invoking the theory of current injection in solids by Lampert and Mark: the experimental current densities at the threshold of each observed regime are compared with the theoretically derived current densities; in the absence of current injection, the measured capacitance is found to be the same as the geometrical capacitance.

Keyword
crystal quality; electrical properties; InP; kinetics; semiinsulating compounds; thermodynamics; VPE; Semiconducting Indium Phosphide
Identifiers
urn:nbn:se:kth:diva-12509 (URN)10.1007/BF02652925 (DOI)
Note
QC 20100429Available from: 2010-04-29 Created: 2010-04-29 Last updated: 2010-05-07Bibliographically approved
10. Hydride vapor phase epitaxy revisited
Open this publication in new window or tab >>Hydride vapor phase epitaxy revisited
1997 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 3, no 3, 749-767 p.Article in journal (Refereed) Published
Keyword
optical fabrication, optoelectronic devices, semiconductor growth, vapour phase epitaxial growth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12730 (URN)10.1109/2944.640630 (DOI)
Note
QC 20100507Available from: 2010-05-07 Created: 2010-05-07 Last updated: 2010-05-07Bibliographically approved
11. Temporally resolved selective regrowth of InP around [110] and [110] mesas
Open this publication in new window or tab >>Temporally resolved selective regrowth of InP around [110] and [110] mesas
1996 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 25, no 3, 389-394 p.Article in journal (Refereed) Published
Abstract [en]

Temporally resolved selective regrowth of InP around reactive ion etched [110] and [110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The regrowth profiles are strikingly different depending upon the mesa orientation. The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions. Various emerging planes during regrowth are identified and are {hhl} planes with initial values of l/h ≤ 3 but ≥ 3 as the planarization is approached. Initial lateral growth defined as the growth away from the mesa at half of its height in the very first minute is a decreasing function of temperature when plotted as Arrhenius curves. Such a behavior is attributed to the exothermicity of the reaction and to an enhanced pyrolysis of PH3 to P2. The lateral growth rate is much larger than that on the planar substrate. This should be taken into account when regrowth of a doped layer (e.g. InP:Fe or InP:Zn) is carried out to fabricate a buried heterostructure device since the dopant concentration can be very much lower than the one optimized on the planar substrates.

Keyword
III-V compounds; InP; Patterned substrates; Reactive ion etching; Selective epitaxy; Selective regrowth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12516 (URN)
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2010-05-07Bibliographically approved
12. Increased modulation bandwidth up to 20 GHz of a detuned-loaded DBR laser
Open this publication in new window or tab >>Increased modulation bandwidth up to 20 GHz of a detuned-loaded DBR laser
Show others...
1994 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 6, no 2, 161-163 p.Article in journal (Refereed) Published
Abstract [en]

A small signal amplitude modulation bandwidth of 20 GHz has been obtained with a three-section tunable DBR laser fabricated with semi-insulating current blocking layers grown by hydride VPE. The modulation bandwidth and laser linewidth are strongly dependent on the position of the lasing mode relative to the Bragg reflection peak.

Keyword
distributed Bragg reflector lasers, laser modes, laser tuning, optical modulation, semiconductor lasers, spectral line breadth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-12529 (URN)10.1109/68.275415 (DOI)
Note
QC 20100504Available from: 2010-05-04 Created: 2010-05-04 Last updated: 2010-05-07Bibliographically approved

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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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Language
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  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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  • text
  • asciidoc
  • rtf