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An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-8545-6546
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0001-8630-5371
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, 213504Article in journal (Refereed) Published
Abstract [en]

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP: Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm(2) at a reverse voltage of -1V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm(2), an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

Place, publisher, year, edition, pages
2015. Vol. 106, no 21, 213504
Keyword [en]
Defect density, Defects, Efficiency, Epitaxial growth, Heterojunctions, Interfaces (materials), Lattice mismatch, Open circuit voltage, Photodiodes, Photovoltaic effects, Quantum efficiency, Scanning electron microscopy, Semiconductor quantum wells, Silicon, Solar cells, Current-voltage measurements, Diode characteristics, Epitaxial lateral overgrowth, External quantum efficiency, Heterojunction photodiodes, High-efficiency solar cells, Hydride vapor phase epitaxy, Internal quantum efficiency
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URN: urn:nbn:se:kth:diva-169968DOI: 10.1063/1.4921992ISI: 000355631400048Scopus ID: 2-s2.0-84930941383OAI: oai:DiVA.org:kth-169968DiVA: diva2:826487
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Swedish Energy AgencyVINNOVA
Note

QC 20150625

Available from: 2015-06-25 Created: 2015-06-25 Last updated: 2017-12-04Bibliographically approved

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Sun, YantingLourdudoss, Sebastian

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