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500 degrees C Bipolar SiC Linear Voltage Regulator
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-3802-7834
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2015 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 6, 1953-1957 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 degrees C up to 500 degrees C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 degrees C-500 degrees C. For both line and load regulations, degradation of 50% from 25 degrees C to 300 degrees C and improvement of 50% from 300 degrees C to 500 degrees C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 degrees C-500 degrees C.

Place, publisher, year, edition, pages
IEEE Press, 2015. Vol. 62, no 6, 1953-1957 p.
Keyword [en]
Bipolar junction transistor (BJT), high-temperature IC, regulators, silicon carbide (SiC)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-169958DOI: 10.1109/TED.2015.2417097ISI: 000355405800040Scopus ID: 2-s2.0-84930198689OAI: oai:DiVA.org:kth-169958DiVA: diva2:826582
Funder
Swedish Foundation for Strategic Research
Note

QC 20150625

Available from: 2015-06-25 Created: 2015-06-25 Last updated: 2017-10-31Bibliographically approved

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Rusu, AnaZetterling, Carl-Mikael

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