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Optical and structural properties of sulfur-doped ELOG InP on Si
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-8545-6546
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 21, 215303Article in journal (Refereed) Published
Abstract [en]

Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO<inf>2</inf> mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

Place, publisher, year, edition, pages
2015. Vol. 117, no 21, 215303
Keyword [en]
Luminescence, Structural properties, Sulfur, Transmission electron microscopy, Cross-sectional transmission electron microscopy, Diffraction conditions, Enhanced luminescence, Epitaxial lateral overgrowth, Fault propagation, Luminescence intensity, Room temperature, Situ thermal annealing
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Identifiers
URN: urn:nbn:se:kth:diva-170308DOI: 10.1063/1.4921868ISI: 000355925600063Scopus ID: 2-s2.0-84930394456OAI: oai:DiVA.org:kth-170308DiVA: diva2:827729
Funder
Swedish Research CouncilSwedish Foundation for Strategic Research Knut and Alice Wallenberg Foundation
Note

QC 20150629

Available from: 2015-06-29 Created: 2015-06-29 Last updated: 2017-12-04Bibliographically approved

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Sun, YantingLourdudoss, Sebastian

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